Infineon BSP613P Small Signal

Type: Small Signal

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 33nC

Power consumption: 1.8W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 2.9A

Input Capacitance (Ciss): 875pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 130mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V