Infineon FP35R12KT4BPSA1 IGBT硅模块 1200 V，35 A PIM 三相输入整流IGBT模块
制造商Infineon(查看更多该品牌的产品)
ModelFP35R12KT4BPSA1
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Technology: Si
Configuration: 3-Phase Inverter
Pd - Power Dissipation: 210 W
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.85 V
Continuous Collector Current at 25 C: 35 A
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