Infineon FS100R07N2E4BPSA1 IGBT硅模块 650 V，100 A 六片装IGBT模块
制造商Infineon(查看更多该品牌的产品)
ModelFS100R07N2E4BPSA1
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Technology: Si
Configuration: 6-Pack
Pd - Power Dissipation: 335 W
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 100 A
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