Infineon IPP65R115CFD7AAKSA1 MOSFETs 汽车用COOLMOS

Technology: Si

Unit Weight: 5.149 g

Channel Mode: Enhancement

REACH - SVHC: Details

Qualification: AEC-Q101

Mounting Style: Through Hole

Qg - Gate Charge: 41 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 114 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 21 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 115 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V