Infineon IRF8306MTRPBF MOSFET

Vgs(th): 2.35 V

Vgs (Max): 20V

Gate Charge (Qg): 38nC

Power consumption: 2.1|75W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 23A/140A

Input Capacitance (Ciss): 4110pF

Operating temperature range: -40 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 2.5mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V