InterFET 2N3821 JFET JFET N沟道 -50V 低Ciss

Technology: Si

Unit Weight: 1.430 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 4 V

Drain-Source Current at Vgs=0: 2.5 mA

Id - Continuous Drain Current: 400 uA

Forward Transconductance - Min: 1500 uS

Vgs - Gate-Source Breakdown Voltage: - 50 V

Vds - Drain-Source Breakdown Voltage: 15 V