InterFET 2N4341 JFET JFET N沟道 -50V 低Ciss

Technology: Si

Unit Weight: 1.508 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 6 V

Drain-Source Current at Vgs=0: 9 mA

Id - Continuous Drain Current: 100 pA

Forward Transconductance - Min: 2000 uS

Rds On - Drain-Source Resistance: 800 Ohms

Vgs - Gate-Source Breakdown Voltage: - 50 V

Vds - Drain-Source Breakdown Voltage: 15 V