InterFET J202 JFET JFET N沟道 -40V 低Ciss

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: - 4 V

Drain-Source Current at Vgs=0: 4.5 mA

Id - Continuous Drain Current: 10 nA

Forward Transconductance - Min: 1000 uS

Vgs - Gate-Source Breakdown Voltage: - 40 V

Vds - Drain-Source Breakdown Voltage: 20 V