Technology: Si
Unit Weight: 74.119 mg
Configuration: Single
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Vgs - Gate-Source Breakdown Voltage: - 40 V
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Technology: Si
Unit Weight: 74.119 mg
Configuration: Single
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Vgs - Gate-Source Breakdown Voltage: - 40 V
直接联系认证专家