InterFET SMP4856 JFET JFET N沟道 -40V 低噪声

Technology: Si

Unit Weight: 401.250 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Gate-Source Cutoff Voltage: - 10 V

Drain-Source Current at Vgs=0: 50 mA

Rds On - Drain-Source Resistance: 25 Ohms

Vgs - Gate-Source Breakdown Voltage: - 40 V

Vds - Drain-Source Breakdown Voltage: 15 V