IXYS IXFB50N80Q2 MOSFET 50安培 800伏

Width: 5.31 mm

Height: 26.59 mm

Length: 20.29 mm

Fall Time: 13 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 890 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 150 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V