IXYS IXFH12N120 MOSFETs 12安培 1200伏 1.3 Rds

Width: 5.3 mm

Height: 21.46 mm

Length: 16.26 mm

Fall Time: 17 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 24 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.4 Ohms

Vds - Drain-Source Breakdown Voltage: 1.2 kV