IXYS IXFJ13N50 MOSFETs 13安培 500伏 0.4 Rds

Width: 14 mm

Height: 5.1 mm

Length: 16.05 mm

Fall Time: 32 ns

Rise Time: 27 ns

Technology: Si

Unit Weight: 6.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 180 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 76 ns

Id - Continuous Drain Current: 13 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 400 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V