IXYS IXFK180N10 MOSFETs 100V 180A

Width: 5.13 mm

Height: 26.16 mm

Length: 19.96 mm

Fall Time: 65 ns

Rise Time: 90 ns

Technology: Si

Unit Weight: 10 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 390 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 560 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 50 ns

Typical Turn-Off Delay Time: 140 ns

Id - Continuous Drain Current: 180 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 90 S

Rds On - Drain-Source Resistance: 8 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2 V