IXYS IXFK64N60P MOSFET 600V 64A

Width: 5.13 mm

Height: 26.16 mm

Length: 19.96 mm

Fall Time: 24 ns

Rise Time: 23 ns

Technology: Si

Unit Weight: 10 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.04 mW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 28 ns

Typical Turn-Off Delay Time: 79 ns

Id - Continuous Drain Current: 64 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 63 S

Rds On - Drain-Source Resistance: 96 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V