Technology: Si
Unit Weight: 2 g
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Id - Continuous Drain Current: 130 A
Rds On - Drain-Source Resistance: 9.1 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
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Technology: Si
Unit Weight: 2 g
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Id - Continuous Drain Current: 130 A
Rds On - Drain-Source Resistance: 9.1 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
直接联系认证专家