IXYS IXTA2N100P MOSFET 2安培 1000伏 7.5 Rds

Width: 9.65 mm

Height: 4.83 mm

Length: 10.41 mm

Fall Time: 27 ns

Rise Time: 29 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 86 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 80 ns

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7.5 Ohms

Vds - Drain-Source Breakdown Voltage: 1 kV