IXYS IXTA32P20T-TRL MOSFETs IXTA32P20T TRL

Fall Time: 12 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 2.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 185 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Typical Turn-On Delay Time: 32 ns

Typical Turn-Off Delay Time: 57 ns

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 18 S

Rds On - Drain-Source Resistance: 130 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 2 V