IXYS IXTA36N30T MOSFETs 36安培 300伏 110 Rds

Technology: Si

Unit Weight: 4 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 36 A

Rds On - Drain-Source Resistance: 110 mOhms

Vds - Drain-Source Breakdown Voltage: 300 V