Technology: Si
Unit Weight: 4 g
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Id - Continuous Drain Current: 54 A
Rds On - Drain-Source Resistance: 72 Ohms
Vds - Drain-Source Breakdown Voltage: 300 V
快速支持
直接联系认证专家
Technology: Si
Unit Weight: 4 g
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Id - Continuous Drain Current: 54 A
Rds On - Drain-Source Resistance: 72 Ohms
Vds - Drain-Source Breakdown Voltage: 300 V
直接联系认证专家