IXYS IXTH36P10 MOSFETs -36安培 -100伏 0.075导通电阻

Width: 5.3 mm

Height: 21.46 mm

Length: 16.26 mm

Fall Time: 28 ns

Rise Time: 37 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 180 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 35 ns

Typical Turn-Off Delay Time: 65 ns

Id - Continuous Drain Current: 36 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 75 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V