IXYS IXTP08N100P MOSFETs 0.8安培 1000伏 20 Rds

Width: 4.83 mm

Height: 9.15 mm

Length: 10.66 mm

Fall Time: 34 ns

Rise Time: 37 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 11.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 42 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 20 Ohms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 4 V