IXYS IXTP08N50D2 MOSFETs N沟MOSFETs 500V 800MA

Fall Time: 52 ns

Rise Time: 54 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Depletion

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 12.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 60 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 28 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 340 mS

Rds On - Drain-Source Resistance: 4.6 Ohms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V