快速支持
直接联系认证专家
Technology: Si
Unit Weight: 2 g
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Id - Continuous Drain Current: 36 A
Rds On - Drain-Source Resistance: 60 Ohms
Vds - Drain-Source Breakdown Voltage: 200 V
