IXYS IXTT16N50D2 MOSFETs D2 耗尽型功率

Fall Time: 220 ns

Rise Time: 173 ns

Technology: Si

Unit Weight: 6.500 g

Channel Mode: Depletion

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 199 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 695 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 50 ns

Typical Turn-Off Delay Time: 203 ns

Id - Continuous Drain Current: 16 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7 S

Rds On - Drain-Source Resistance: 300 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 2 V