IXYS MIXA600PF650TSF IGBT模块

Technology: Si

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.75 kW

Gate-Emitter Leakage Current: 1.5 uA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 720 A