Type: Power MOSFET
Polarity: N
Gate Charge (Qg): 360nC
Power consumption: 600W
Circuit configuration: Single Dual Source
Drain to Source voltage: 150V
Continuous drain current: 150A
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 12.5mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
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