Type: Power MOSFET
Polarity: N
Gate Charge (Qg): 195nC
Power consumption: 600W
Circuit configuration: Single Dual Source
Drain to Source voltage: 1000V
Continuous drain current: 24A
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 390mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
快速支持
直接联系认证专家

