Type: Power MOSFET
Vgs(th): 4 V
Vgs (Max): 20V
Gate Charge (Qg): 16.3nC
Power consumption: 130W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 4000V
Continuous drain current: 300mA
Input Capacitance (Ciss): 435pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 290Ohm
Drive Voltage (Max Rds On, Min Rds On): 10V
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