MACOM CGH40090PP 氮化镓高电子迁移率晶体管 GaN HEMT 直流-2.5GHz，90瓦

Gain: 12.5 dB

Technology: GaN

Unit Weight: 44.072 g

Output Power: 100 W

Configuration: Dual

Mounting Style: Screw Mount

Development Kit: CGH40090PP-TB

Transistor Type: GaN HEMT

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Maximum Operating Frequency: 2.5 GHz

Minimum Operating Frequency: 500 MHz

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3 V