MACOM CGHV35150F 氮化镓高电子迁移率晶体管 GaN HEMT 2.9-3.5GHz，150瓦

Gain: 13.3 dB

Technology: GaN

Output Power: 170 W

Configuration: Single

Mounting Style: Screw Mount

Development Kit: CGHV35150-TB

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 3.5 GHz

Minimum Operating Frequency: 3.1 GHz

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 3 V