MACOM CGHV40180F 氮化镓场效应晶体管 氮化镓高电子迁移率晶体管

Gain: 20.3 dB

Technology: GaN

Unit Weight: 25.676 g

Output Power: 180 W

Mounting Style: Screw Mount

Development Kit: CGHV40180F-TB1

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 W

Maximum Operating Frequency: 1 GHz

Minimum Operating Frequency: 50 MHz

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 125 V

Vgs th - Gate-Source Threshold Voltage: - 3.8 V