MACOM CGHV40320D-GP4 氮化镓高电子迁移率晶体管 GaN HEMT芯片 直流-4.0GHz，320瓦

Technology: GaN

Unit Weight: 649 mg

Output Power: 320 W

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 4 GHz

Minimum Operating Frequency: 0 Hz

Vds - Drain-Source Breakdown Voltage: 50 V