MACOM PTAB182002FC-V1-R250 射频功率MOSFET 射频LDMOS场效应管

Gain: 15.5 dB

Technology: Si

Output Power: 190 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.805 GHz to 1.88 GHz

Transistor Polarity: Dual N-Channel

Vgs - Gate-Source Voltage: 10 V

Maximum Operating Temperature: + 200 C

Rds On - Drain-Source Resistance: 150 mOhms

Vds - Drain-Source Breakdown Voltage: 65 V