Micro Commercial Components (MCC) MSJP14N65A-BP 金属氧化物半导体场效应晶体管

Technology: Si

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 25.9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 147 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 14 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 230 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3.2 V