Micro Commercial Components (MCC) SICW080N120Y-BP 碳化硅MOSFET

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: Through Hole

Qg - Gate Charge: 41 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 220 W

Vgs - Gate-Source Voltage: - 8 V, + 22 V

Id - Continuous Drain Current: 38 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 85 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.6 V