Microchip Technology 2N5115e3 JFETs JFET

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Gate-Source Cutoff Voltage: 3 V to 6 V

Maximum Drain Gate Voltage: 30 V

Drain-Source Current at Vgs=0: - 15 mA to - 60 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 100 Ohms

Vgs - Gate-Source Breakdown Voltage: 30 V

Vds - Drain-Source Breakdown Voltage: 30 V