Microchip Technology 2N6301E3 双极型晶体管 BJTs - 功率双极型晶体管

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 75 W

DC Current Gain hFE Max: 18000

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 8 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 500

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 3 V