Microchip Technology APT100GT120JRDQ4 SiC IGBT 模块 IGBT NPT 中频组合 1200 V 100 A SOT-227

Technology: SiC

Unit Weight: 29.200 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 570 W

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 123 A