Microchip Technology APT11N80BC3G MOSFETs MOSFET COOLMOS 800 V 11 A TO-247

Width: 16.26 mm

Height: 5.31 mm

Length: 21.46 mm

Fall Time: 7 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 60 nC

Transistor Polarity: N-Channel

Pd - Power Dissipation: 156 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 70 ns

Id - Continuous Drain Current: 11 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 390 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 3 V