Microchip Technology APT20M38SVRG MOSFETs MOSFET MOS5 200 V 38 mOhm TO-268

Width: 13.99 mm

Height: 5.08 mm

Length: 16.05 mm

Fall Time: 10 ns

Rise Time: 21 ns

Technology: Si

Unit Weight: 6.200 g

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 148 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 370 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 48 ns

Id - Continuous Drain Current: 67 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 38 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 4 V