Microchip Technology APT21M100J 功率MOSFET MOSFET MOS8 1000 V 21 A SOT-227

Width: 25.2 mm

Height: 8.9 mm

Length: 38 mm

Fall Time: 33 ns

Rise Time: 35 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 462 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 39 ns

Typical Turn-Off Delay Time: 130 ns

Id - Continuous Drain Current: 21 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 380 mOhms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 3 V