Microchip Technology APT28M120B2 MOSFETs MOSFET MOS8 1200 V 28 A TO-247 MAX

Width: 5.31 mm

Height: 21.46 mm

Length: 16.26 mm

Fall Time: 48 ns

Rise Time: 31 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 300 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.135 kW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 50 ns

Typical Turn-Off Delay Time: 170 ns

Id - Continuous Drain Current: 29 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 31 S

Rds On - Drain-Source Resistance: 530 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V