Microchip Technology APT29F100L MOSFETs FREDFET MOS8 1000 V 29 A TO-264

Fall Time: 33 ns

Rise Time: 35 ns

Technology: Si

Unit Weight: 10 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 260 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.04 kW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 39 ns

Typical Turn-Off Delay Time: 130 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 34 S

Rds On - Drain-Source Resistance: 370 mOhms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 2.5 V