Microchip Technology APT33GF120B2RDQ2G IGBT晶体管 IGBT NPT 低频组合 1200 V 33 A TO-247 MAX

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 357 W

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 64 A