Microchip Technology APT40GL120JU2 IGBT模块 PM-IGBT-TFS-SOT227

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 220 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 65 A