Microchip Technology APT8M100B MOSFETs MOSFET MOS8 1000 V 8 A TO-247

Width: 16.26 mm

Height: 5.31 mm

Length: 21.46 mm

Fall Time: 7.2 ns

Rise Time: 7.8 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 60 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 290 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 8.5 ns

Typical Turn-Off Delay Time: 29 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7.5 S

Rds On - Drain-Source Resistance: 1.53 Ohms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 4 V