Microchip Technology APT9F100B MOSFETs FREDFET MOS8 1000 V 9 A TO-247

Fall Time: 24 ns

Rise Time: 27 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 80 nC

Transistor Polarity: N-Channel

Pd - Power Dissipation: 337 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 27 ns

Typical Turn-Off Delay Time: 84 ns

Id - Continuous Drain Current: 9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10 S

Rds On - Drain-Source Resistance: 1.6 Ohms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 4 V