Microchip Technology APTGLQ150A120TG IGBT模块 PM-IGBT-TFS-SP4

Technology: Si

Unit Weight: 110 g

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 750 W

Gate-Emitter Leakage Current: 240 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.05 V

Continuous Collector Current at 25 C: 250 A