Microchip Technology APTGT30A170T1G IGBT模块 PM-IGBT-TFS-SP1

Technology: Si

Unit Weight: 80 g

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 210 W

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 45 A